Analysis technique for ultra shallow junction using medium energy ion scattering time-of-flight elastic recoil detection analysis-Reference-Cited by-同舟云学术

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Analysis technique for ultra shallow junction using medium energy ion scattering time-of-flight elastic recoil detection analysis

Published:2014-06-11 Issue:12-13 Volume:46 Page:1192-1195
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Abo Satoshi¹,Pei Ri¹,Yuan Yao Xin¹,Wakaya Fujio¹,Takai Mikio¹

Affiliation:

1. Graduate School of Engineering Science; Osaka University; 1-3, Machikaneyama Toyonaka Osaka 560-8531 Japan

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. International Technology Roadmap for Semiconductors 2012 update http://www.itrs.net

2. Scanning spreading resistance microscopy of shallow doping profiles in silicon

3. Evaluation of the junction delineation accuracy and reproducibility with the SSRM technique

4. S. Abo K. Nishikawa F. Wakaya T. Iwamatsu H. Oda M. Takai Proc. 17th Intl. Conf. Ion Implant. Technol. (IIT2008), AIP Conf. Proc. 2009 1066 83

5. S. Abo K. Nishikawa N. Ushigome F. Wakaya T. Iwamatsu H. Oda M. Takai Proc. 18th Intl. Conf. Ion Implant. Technol. (IIT2010), AIP Conf. Proc. 2011 1321 229

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