Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors-Reference-Cited by-同舟云学术

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Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

Published:2015-09 Issue: Volume:358 Page:188-193
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kaya S.,Yilmaz E.,Kahraman A.,Karacali H.

Funder

Abant Izzet Baysal University

Ministry of Development of Turkey

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference49 articles.

1. Transport in Metal–Oxide–Semiconductor Structures;Bentarzi,2011

2. High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices;Filipescu;Appl. Surf. Sci.,2007

3. Methods to improve properties of gate dielectrics in metal-oxide-semiconductor;Liu;Adv. Mater. Res. II,2012

4. Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics;Lin;Solid State Electron.,2012

5. Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors;Tugay;J. Vac. Sci. Technol., A,2012

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