High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices-Reference-Cited by-同舟云学术

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High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

Published:2007-07 Issue:19 Volume:253 Page:8184-8191
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Filipescu M.,Scarisoreanu N.,Craciun V.,Mitu B.,Purice A.,Moldovan A.,Ion V.,Toma O.,Dinescu M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Growth of polycrystalline silicon films on glass by high-temperature chemical vapour deposition

2. Nanocrystallization and Phase Transformation in Monodispersed Ultrafine Zirconia Particles from Various Homogeneous Precipitation Methods

3. Cathodic electrolytic deposition of zirconia films

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1. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide;Nano Convergence;2023-12-01

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3. Phase Composition, Microstructure, and Electroconductivity of HfO2–R2O3 Solid Electrolytes (R = Sc, Y, Ho, Er, Tm, Yb, and Lu);Physics of the Solid State;2020-01

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