Flatband voltage in MOS structures for spatial fixed oxide charge distributions-Reference-Cited by-同舟云学术

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Flatband voltage in MOS structures for spatial fixed oxide charge distributions

Published:2023-05 Issue:15 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Hazarika Prajwalita,Ray Mrigashree,Hazarika Aditya,Deb Deepjyoti,Das Prachuryya Subash,Choudhury Hirakjyoti,Goswami Rupam^ORCID

Funder

DST India

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-10626-0.pdf

Reference27 articles.

1. E.H. Nicollian, J.R. Brews, MOS (metal oxide semiconductor) physics and technology (Wiley-Interscience, Hoboken, 2003)

2. Y. Taur, T.H. Ning, Fundamentals of modern VLSI devices (Cambridge Univ. Press, Cambridge, 2013)

3. R.S. Muller, T.I. Kmins, Device electron for integrated circuits (John Wiley, New York, 2003)

4. S.M. Sze, Y. Li, K.K. Ng, Physics of semiconductor devices (John Wiley & Sons, 2021)

5. R.F. Pierret, Semiconductor device fundamentals (Pearson/Education, New Delhi, 2008)

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