Exposure parameters in proton beam writing for hydrogen silsesquioxane
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference29 articles.
1. Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations
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3. Sub-10 nm Linewidth and Overlay Performance Achieved with a Fine-Tuned EBPG-5000 TFE Electron Beam Lithography System
4. Supercritical resist drying for isolated nanoline formation
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4. Fabrication of polydimethylsiloxane microlens arrays on a plastic film by proton beam writing;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-11
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