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Monitoring interstitial fluxes by self-assembled nanovoids in ion-implanted Si/SiGe/Si strained structures

  • Published:2005-04 Issue:1-4 Volume:230 Page:214-219
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gaiduk P.I.,Lundsgaard Hansen J.,Nylandsted Larsen A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Ion Implantation in Semiconductors;Mayer,1970

2. Deep Centers in Semiconductors;Watkins,1986

3. Ion implantation of Si and GaAs;Souza,1994

4. A systematic analysis of defects in ion-implanted silicon

5. Nanovoids in MBE-grown SiGe alloys implantedin situwithGe+ions

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