Radiation enhanced diffusion of implanted platinum in silicon guided by helium co-implantation for arbitrary control of platinum profile
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques
2. Electrical properties of platinum in silicon
3. The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses
4. High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum
5. Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation
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1. A high sensitivity microbeam RBS setup for heavy elements implantation profiles analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-12
2. Doping compensation for increased robustness of fast recovery silicon diodes;Microelectronics Reliability;2010-01
3. Neon implantation and the radiation enhanced diffusion of platinum for the local lifetime control in high-power silicon diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09
4. Hydrogenation of platinum introduced in silicon by radiation enhanced diffusion;Materials Science and Engineering: B;2009-03
5. Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices;IEEE Transactions on Electron Devices;2007-06
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