The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123334
Reference21 articles.
1. Gettering of metals by He induced voids in silicon
2. Gettering of platinum and silver to cavities formed by hydrogen implantation in silicon
3. Diffusion of platinum into dislocated and non-dislocated silicon
4. Efficiency and thermal stability of Pt gettering in crystalline Si
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