Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si-Reference-Cited by-同舟云学术

Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si

Published:2004-06 Issue: Volume:219-220 Page:604-610
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nastasi Michael,Höchbauer Tobias,Verda Raymond D.,Misra Amit,Lee Jung-Kun,Mayer James W.,Lau S.S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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5. Application of hydrogen ion beams to Silicon On Insulator material technology

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2. Origin of reverse annealing effect in hydrogen-implanted silicon;Applied Physics Letters;2010-04-12

3. Role of strain in the blistering of hydrogen-implanted silicon;Applied Physics Letters;2006-09-04

4. Nucleation and growth of platelets in hydrogen-ion-implanted silicon;Applied Physics Letters;2005-04-11