Amorphous phase formation in ion implanted InxGa1−xAs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Amorphous phase formation in ion implanted InxGa1−xAs

Published:2007-04 Issue:1-2 Volume:257 Page:344-347
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hussain Z.S.,Wesch W.,Wendler E.,Ridgway M.C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

2. P. Bhattacharya (Ed.), Properties of Indium Gallium Arsenide, EMIS Data Review Series, Vol. 8, INSPEC, 1993.

3. Ion damage buildup and amorphization processes in AlxGa1−xAs

4. The rapid amorphisation of In0.53Ga0.47As relative to both InAs and GaAs

5. Rapid amorphization in InxGa1−xAs alloys at temperatures between 15K and 300K

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Damage evolution and amorphization in semiconductors under ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP