Model for radiation damage buildup in GaN
Author:
Funder
RFBR
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. GaN: Processing, defects, and devices
2. Ion implantation into GaN
3. Amorphization processes in Au ion irradiated GaN at 150–300 K
4. Structural and optical characterization of Eu-implanted GaN
5. Mechanisms of damage formation in semiconductors
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3. Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs;Vacuum;2022-06
4. Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms;Journal of Physics D: Applied Physics;2022-01-31
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