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Structural and optical characterization of Eu-implanted GaN

  • Published:2009-07-31 Issue:16 Volume:42 Page:165103
  • ISSN:0022-3727
  • Container-title:Journal of Physics D: Applied Physics
  • language:
  • Short-container-title:J. Phys. D: Appl. Phys.

Author:

Lorenz K,Barradas N P,Alves E,Roqan I S,Nogales E,Martin R W,O'Donnell K P,Gloux F,Ruterana P

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02

2. Extracting defect profiles in ion-implanted GaN from ion channeling;Materials Science in Semiconductor Processing;2023-11

3. Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-05

4. Ion Implantation into Nonconventional GaN Structures;Physics;2022-05-16

5. Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms;Journal of Physics D: Applied Physics;2022-01-31
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