Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas
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5. Atomic force microscopy and x-ray diffraction studies of aluminum-induced crystallization of amorphous silicon in Al/α-Si:H, α-Si:H/Al, and Al/α-Si:H/Al thin film structures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes;Nanoscale Research Letters;2018-01-16
2. Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si1;Materials Today: Proceedings;2016
3. In situ spectromicroscopic study of nickel induced lateral crystallization of amorphous silicon thin film using SPESM;Surface Science;2007-01
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