Ultra shallow junction formation and dopant activation study of Ga implanted Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association.
2. Boron Ted in Pre-Amorphised SI: Role of the A/C Interface
3. Retardation of boron diffusion in silicon by defect engineering
4. Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer
5. Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation
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1. Review on Analytical Methods of Doping Elements in Synthetic Crystals;SPECTROSC SPECT ANAL;2016
2. Ab initio study of the diffusion mechanisms of gallium in a silicon matrix;The European Physical Journal B;2008-07
3. Refractive index, free carrier concentration, and mobility depth profiles of ion implanted Si: optical investigation using FTIR spectroscopy;Journal of the Optical Society of America B;2008-04-30
4. Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy;Applied Optics;2008-01-08
5. Electrooptic modulation of multisilicon-on-insulator photonic wires;Journal of Lightwave Technology;2006-05
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