Experimental study on heavy ion single event effects in SOI SRAMs-Reference-Cited by-同舟云学术

Experimental study on heavy ion single event effects in SOI SRAMs

Published:2009-01 Issue:1 Volume:267 Page:83-86
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yonghong Li,Chaohui He,Fazhan Zhao,Tianlei Guo,Gang Liu,Zhengsheng Han,Jie Liu,Gang Guo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Radiation effects in SOI technologies;Schwank;IEEE Trans. Nucl. Sci.,2003

2. Geometrical factors in SEE rate calculations;Petersen;IEEE Trans. Nucl. Sci.,1993

3. Li Yonghong, He Chaohui, Zhou Hui, Prediction for single event upset rate in space orbits based on Cf-252 experimental results, Sciencepaper Online, 200807-260.

4. Experimental study on heavy ions single event upset effects in static random access memories;Chaohui;Nucl. Elect. Detect,2002

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