Three-dimensional Simulation Methodology for Ionizing Radiation Effect in Ultra-scaled SOI FinFETs-Reference-Cited by-同舟云学术

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Three-dimensional Simulation Methodology for Ionizing Radiation Effect in Ultra-scaled SOI FinFETs

Published:2022-10-03 Issue: Volume: Page:1-5
ISSN:
Container-title:2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Sun Yichao¹,Lu Peng²,Zhang Xu¹,Zhang Junjun¹,Yang Can²,Zhang Qingzhu³,Han Zhengsheng²,Li Bo²

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences; University of Chinese Academy of Sciences,Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences,Beijing,China,100029

2. Institute of Microelectronics, Chinese Academy of Sciences; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences,Beijing,China,100029

3. Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10412245/10412349/10412402.pdf?arnumber=10412402

Reference20 articles.

1. A 14nm logic technology featuring 2^nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm² SRAM cell size

2. A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications

3. Experimental study on heavy ion single event effects in SOI SRAMs

4. Investigation on Impact of Fin Width on Single-Event-Transient in Bulk and SOI FinFETs

5. Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

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