SOI FinFET Design Optimization for Radiation Hardening and Performance Enhancement-Reference-Cited by-同舟云学术

SOI FinFET Design Optimization for Radiation Hardening and Performance Enhancement

Published:2023-09 Issue:3 Volume:23 Page:386-394
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Sun Yichao¹^ORCID,He Yujuan²,Lu Peng¹,Zhang Qingzhu³^ORCID,Zhao Fazhan¹^ORCID,Han Zhengsheng¹,Li Bo¹^ORCID

Affiliation:

1. Institute of Microelectronics and the Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing, China

2. Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Chinese Academy of Science

Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10242179/10158364.pdf?arnumber=10158364

Reference29 articles.

1. Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

2. Intrinsic Tolerance to Total Ionizing Dose Radiation in Gate-All-Around MOSFETs

3. 1/f noise and radiation effects in MOS devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. REMPRO: Reconfigurable Modular Processor;Proceedings of the 21st ACM International Conference on Computing Frontiers: Workshops and Special Sessions;2024-05-07

2. A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance;Microelectronics Reliability;2024-01