Effect of gamma irradiation on resistive switching of Al/TiO 2 /n + Si ReRAM

Author:

Agashe Kirti,Sarwade Nisha,Joshi Sangeeta,Thakurdesai Madhavi,Surwase Smita,Tirmali PravinORCID,Asokan Kandasami

Funder

INUP

IITB

IISc

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference37 articles.

1. Effect of γ-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p-i-n diode;Pillai;Nucl. Instrum. Meth. Phys. Res. A,2012

2. Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures;Karatas;Nucl. Instrum. Meth. Phys. Res. A,2005

3. Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors;Kaya;Nucl. Instrum. Meth. Phys. Res. B,2014

4. ITRS, Process Integration Devices and Structure, The International technology roadmap for semiconductors section 5.2.3.4, 2013, pp. 32–31.

5. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007

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