Radiation-Hardened ReRAM Devices for Flexible Electronics-Reference-Cited by-同舟云学术

Radiation-Hardened ReRAM Devices for Flexible Electronics

Published:2023-09 Issue:5 Volume:2 Page:402-407
ISSN:2768-167X
Container-title:IEEE Journal on Flexible Electronics
language:
Short-container-title:IEEE Flex. Electron.

Author:

Lodhi Anil¹^ORCID,Dwivedi Anurag¹^ORCID,Saini Shalu¹,Jingar Naresh¹,Khandelwal Arpit¹,Tiwari Shree Prakash¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Flexible Large Area Microelectronics (FLAME) Research Group, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan, India

Funder

Sir Visvesvaraya Young Faculty Research Fellowship (YFRF), Ministry of Electronics and Information Technology (MeitY), Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9552934/10322552/10162188.pdf?arnumber=10162188

Reference27 articles.

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4. Review of displacement damage effects in silicon devices

5. Si-based two-terminal resistive switching nonvolatile memory;jo;Proc Int Solid State and Integrated Circuit Technology Conf,2008

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