Radiation-Hardened ReRAM Devices for Flexible Electronics
Author:
Affiliation:
1. Department of Electrical Engineering, Flexible Large Area Microelectronics (FLAME) Research Group, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan, India
Funder
Sir Visvesvaraya Young Faculty Research Fellowship (YFRF), Ministry of Electronics and Information Technology (MeitY), Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9552934/10322552/10162188.pdf?arnumber=10162188
Reference27 articles.
1. Present and Future Non-Volatile Memories for Space
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3. Improving radiation hardness of EEPROM/flash cell by N2O annealing
4. Review of displacement damage effects in silicon devices
5. Si-based two-terminal resistive switching nonvolatile memory;jo;Proc Int Solid State and Integrated Circuit Technology Conf,2008
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