Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD-Reference-Cited by-同舟云学术

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Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

Published:2013-07 Issue: Volume:307 Page:344-348
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Chao D.S.,Liang J.H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference40 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Optical gain in silicon nanocrystals

3. Gaining light from silicon

4. Growth of Ge, Si, and SiGe nanocrystals in SiO2matrices

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1. Radiation resistance of nanolayered silicon nitride capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-05

2. Rapid Thermal Process for Crystallization Silicon Nitride Films;Surface Engineering;2019-01-11

3. Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films;Thin Solid Films;2017-03

4. Silicon Nanocrystals;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17

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