Author:
Van Ginhoven R.M.,Hjalmarson H.P.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Ionizing Radiation Effects in MOS Devices and Circuits,1989
2. The Physics of SiO2 and Its Interfaces;Svensson,1979
3. The role of hydrogen in interface trap creation by radiation in MOS devices – a review;Saks,1993
4. Chemical Structures of the SiO2Si Interface
5. SiO2/Si interface structure and its formation studied by large-scale molecular dynamics simulation
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