Structure, defects, and strain in silicon-silicon oxide interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862809
Reference49 articles.
1. Characterization and production metrology of thin transistor gate oxide films
2. Silicon Device Scaling to the Sub-10-nm Regime
3. High-κ gate dielectrics: Current status and materials properties considerations
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