Optical bandgap and stress variations induced by the formation of latent tracks in GaN under swift heavy ion irradiation

Author:

Moisy F.,Sall M.,Grygiel C.,Ribet A.,Balanzat E.,Monnet I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference34 articles.

1. Gallium nitride based transistors;Xing;J. Phys. Condens. Matter.,2001

2. GaN: processing, defects, and devices;Pearton;J. Appl. Phys.,1999

3. III nitrides and UV detection;Munoz;J. Phys. Condens. Matter.,2001

4. Ion implantation of semiconductors;Williams;Mater. Sci. Eng. A.,1998

5. Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission;Ruterana;Semicond. Sci. Technol.,2015

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Au ion irradiation induces ultralow thermal conductivity in GaN;Applied Physics Letters;2024-07-15

2. Disorder induced in GaN thin films by 200 MeV silver ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-06

3. Hydrogen-Induced Microstructure Changes in Zr/Nb Nanoscale Multilayer Structures;Metals;2024-04-12

4. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices;Journal of Vacuum Science & Technology B;2023-04-19

5. Primary irradiation damages and tribological property evolutions of heavy-ion radiated microcrystalline diamond films grown by MPCVD;Diamond and Related Materials;2023-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3