Testing of defects in Si semiconductor apparatus by using single-photon detection-Reference-Cited by-同舟云学术

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Testing of defects in Si semiconductor apparatus by using single-photon detection

Published:2013-07 Issue: Volume:307 Page:210-213
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhongliang Pan,Ling Chen,Guangju Chen

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices

2. Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams

3. Growth, Defect Formation, and Morphology Control of Germanium–Silicon Semiconductor Nanowire Heterostructures

4. C–V and DLTS studies of radiation induced Si–SiO2 interface defects

5. Universal stress-defect correlation at (100)semiconductor/oxide interfaces

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Secondary bonding networks in small (HgS)n clusters: A theoretical investigation;Computational and Theoretical Chemistry;2015-05

2. Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector;Chinese Physics B;2014-10

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