Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams-Reference-Cited by-同舟云学术

Swelling and annealing phenomena of Si crystal irradiated by Ar and C ion beams

Published:2012-07 Issue: Volume:282 Page:17-20
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang J.,Momota S.,Toyonaga T.,Terauchi H.,Imanishi F.,Taniguchi J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Ion implantation damage and annealing in germanium

2. A comparative study of swelling, strain and radiation damage of high-energy proton-bombarded GaAs, GaP, InP, Si and Ge single crystals

3. S. Momota, J. Zhang, T. Toyonaga, H. Terauchi, K. Maeda, J. Taniguchi, T. Hirao, M. Furuta, T. kawaharamura, J. Nanosci. Nanotechnol. (2011) In press.

4. Mechanism of swelling in low-energy ion-irradiated silicon

5. Surface swelling of MeV Si ion implanted silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Helium implantation in Si (100): Swelling, microstructure, and mechanical property changes;Journal of Applied Physics;2022-07-14

2. Investigation of the residual stress in reaction-bonded SiC under irradiation;Journal of the European Ceramic Society;2016-12

3. Testing of defects in Si semiconductor apparatus by using single-photon detection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07