Growth, Defect Formation, and Morphology Control of Germanium–Silicon Semiconductor Nanowire Heterostructures-Reference-Cited by-同舟云学术

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Growth, Defect Formation, and Morphology Control of Germanium–Silicon Semiconductor Nanowire Heterostructures

Published:2011-08-31 Issue:10 Volume:11 Page:4200-4206
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Dayeh Shadi A.¹,Wang Jian²,Li Nan¹,Huang Jian Yu³,Gin Aaron V.³,Picraux S. Thomas¹

Affiliation:

1. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

2. Materials Science and Technology Division, MST-8, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

3. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202126q

Reference33 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. One-dimensional Steeplechase for Electrons Realized

3. Twinning superlattices in indium phosphide nanowires

4. Controlled polytypic and twin-plane superlattices in iii–v nanowires

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