Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation
Author:
Funder
National Research Foundation
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. Front-end process modeling in silicon
2. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam
3. Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions
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