The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference3 articles.
1. Electro-optic characteristics and switching principle of a nematic liquid crystal cell controlled by fringe-field switching
2. Optical and compositional properties of a‐Si:H/transparent conductive oxide interfaces
3. Effect of hydrogen plasma treatment on transparent conducting oxides
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