Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V semiconductor interfaces
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Ohmic behavior of Au/WSiN/(Au,Ge,Ni)-n-GaAs systems;Merkel;Thin Solid Films,1992
2. RTA-Treated Ohmic Contacts to GaAs Containing WSiN Barriers;Nebauer,1995
3. Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers;Chen;J. Vac. Sci. Technol. B.,1992
4. Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs;Kuan;J. Appl. Phys.,1983
5. Microstructure of Metal-GaAs Interfaces;Kuan,1986
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Interface states at semiconductor junctions;Reports on Progress in Physics;1999-01-01
2. Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties;Journal of Applied Physics;1998-07-15
3. Preparation, Transmission Electron Microscopy, and Microanalytical Investigations of Metal-III-V Semiconductor Interfaces;Materials Characterization;1997-08
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