MOS capacitors with PECVD SiOxNy insulating layer
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. On the passivation performance of SiNx, SiOxNy and their stack on c-Si wafers for solar cell applications: Correlation with optical, chemical and interface properties;Solar Energy Materials and Solar Cells;2023-07
2. Development of High-K Gate Dielectric Materials;Journal of Inorganic Materials;2008-10-23
3. Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power;Journal of Non-Crystalline Solids;2008-05
4. Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical properties;Journal of Non-Crystalline Solids;2006-06
5. Study of PECVD SiOxNy films dielectric properties with different nitrogen concentration utilizing MOS capacitors;Microelectronic Engineering;2005-02
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