Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
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1. The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride;physica status solidi (c);2012-09-25
2. Silicon lifetime enhancement by SiNx:H anti-reflective coating deposed by PECVD using SiH4 and N2 reactive gas;Solar Energy;2012-05
3. Silicon oxynitride-based integrated optical switch;SPIE Proceedings;2009-02-12
4. Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power;Journal of Non-Crystalline Solids;2008-05
5. Modelling and Optimization for Deposition of SiO x N y Films by Radio-Frequency Reactive Sputtering;Chinese Physics Letters;2007-08-23
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