Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation
3. Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures
4. Optimization of PECVD silicon oxynitride for silicon MIS devices with low interface state density
5. Thick SiO x N y and SiO 2 films obtained by PECVD technique at low temperatures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Classification of the Categories of Amorphous Hydrogenated Silicon Oxynitride Films Using Infrared Spectroscopy;ICREEC 2019;2020
2. Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation;Nanoscale Research Letters;2013-05-01
3. Ellipsometric and Rutherford Back Scattering Spectrometry Studies of SiOXNY Films Elaborated by Plasma-Enhanced Chemical Vapour Deposition Technique;Journal of Nanoscience and Nanotechnology;2011-10-01
4. Explosion characteristics of flammable organic vapors in nitrous oxide atmosphere;Journal of Hazardous Materials;2010-11
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