Ellipsometric and Rutherford Back Scattering Spectrometry Studies of SiOXNY Films Elaborated by Plasma-Enhanced Chemical Vapour Deposition Technique-Reference-Cited by-同舟云学术

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Ellipsometric and Rutherford Back Scattering Spectrometry Studies of SiO_XN_Y Films Elaborated by Plasma-Enhanced Chemical Vapour Deposition Technique

Published:2011-10-01 Issue:10 Volume:11 Page:9118-9122
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Mahamdi R.,Boulesbaa M.,Saci L.,Mansour F.,Molliet C.,Collet M.,Temple-Boyer P.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ellipsometric studies of nickel oxide thin films synthesized via spray pyrolysis at varied substrate temperatures for optoelectronic applications;Spectroscopy Letters;2023-08-01

2. Spectroscopic ellipsometry and FTIR characterization of annealed SiOxNy:H films prepared by PECVD;Optical Materials;2021-12

3. Classification of the Categories of Amorphous Hydrogenated Silicon Oxynitride Films Using Infrared Spectroscopy;ICREEC 2019;2020

4. Optical and physicochemical properties of hydrogenated silicon nitride thin films: Effect of the thermal annealing;Spectroscopy Letters;2017-01-02

5. Spectroscopic Ellipsometry Characterization of Thin Films Deposited on Silicon Substrate;Journal of New Technology and Materials;2014

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