Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials-Reference-Cited by-同舟云学术

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Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials

Published:2020-12 Issue: Volume:12 Page:100092
ISSN:2588-8420
Container-title:Materials Today Nano
language:en
Short-container-title:Materials Today Nano

Author:

Wu Z.^ORCID,Jie W.^ORCID,Yang Z.^ORCID,Hao J.

Funder

National Natural Science Foundation of China

State Key Laboratory of Information Photonics and Optical Communications

Sichuan Youth Science and Technology Foundation

Research Grants Council

Central Universities

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference146 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. A roadmap for graphene;Novoselov;Nature,2012

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotechnol.,2012

4. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

5. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010

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