Minority Carrier Lifetime of n-type Mono-crystalline Silicon Produced by Continuous Czochralski Technology and its Effect on Hetero-junction Solar Cells-Reference-Cited by-同舟云学术

Minority Carrier Lifetime of n-type Mono-crystalline Silicon Produced by Continuous Czochralski Technology and its Effect on Hetero-junction Solar Cells

Published:2016-08 Issue: Volume:92 Page:708-714
ISSN:1876-6102
Container-title:Energy Procedia
language:en
Short-container-title:Energy Procedia

Author:

Xu Han,Tian Xiaorang

Publisher

Elsevier BV

Reference3 articles.

1. Characterization of n-type mono-crystalline silicon ingots produced by continuous Czochralski (Cz) Technology;Xu;Energy Procedia,2015

2. D.L. Batzner, L. Andreetta, D. Lachenal, W. Frammelsberger, B. Legradic, J. Meixenberger, P. Papet, B. Strahm, G. Wahli, “Silicon material considerations for heterojunction solar cells: potential and limitations”, Proceedings 29th EUPVSEC, Amsterdam, Netherlands, 2014, pages 789-792.

3. S. Harrison, “CEA-INES heterojunction solar cell ‘LABFAB’ industrial pilot line: production capability demonstration, roadmap to 22% mean efficiency”, Proceedings 29th EUPVSEC, Amsterdam, Netherlands, 2014, pages 1049-1052.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of melt depth on oxygen transport in silicon crystal growth by continuous-feeding Czochralski method;Journal of Crystal Growth;2023-05

2. Adjustment of resistivity for phosphorus-doped n-type multicrystalline silicon;Solar Energy Materials and Solar Cells;2022-12

3. Analysis of specifications of solar photovoltaic panels;Renewable and Sustainable Energy Reviews;2022-05

4. Effects of different partition depths on heat and oxygen transport during continuous Czochralski (CCz) silicon crystal growth;Journal of Crystal Growth;2022-04

5. Control of Oxygen Impurities in a Continuous-Feeding Czochralski-Silicon Crystal Growth by the Double-Crucible Method;Crystals;2021-03-08