Adjustment of resistivity for phosphorus-doped n-type multicrystalline silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Minority carrier lifetime degradation in boron-doped Czochralski silicon;Glunz;J. Appl. Phys.,2001
2. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Appl. Phys. Lett.,2004
3. Excellent average diffusion lengths of 600 μm of N-type multicrystalline silicon wafers after the full solar cell process including boron diffusion;Michl;Energy Proc.,2013
4. Efficiency Chart and Explanatory Notes,2022
5. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry;ur Rehman;Sci. World J.,2013
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