Author:
Veith Boris,Werner Florian,Zielke Dimitri,Brendel Rolf,Schmidt Jan
Reference12 articles.
1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge;Agostinelli;Solar Energy Materials & Solar Cells,2006
2. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3;Hoex;Apllied Physics Letters,2006
3. Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition;Dingemans;Physica Status Solidi Rapid Research Letters,2010
4. Surface Passivation of High-efficiency Silicon Solar Cells by Atomic-layer-deposited Al2O3;Schmidt;Progress in Photovoltaics: Research and Apllication,2008
5. Schmidt J, Werner F, Veith B, Zielke D, Bock R, Tiba V, et al. Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells. Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 2010, pp. 1130-1133.
Cited by
67 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献