A Fast and Easily Implemented Method for Interstitial Oxygen Concentration Mapping Through the Activation of Thermal Donors in Silicon.
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Publisher
Elsevier BV
Reference11 articles.
1. Effect of oxygen on dislocation movement in silicon
2. Slow down of the light-induced-degradation in compensated solar-grade multicrystalline silicon
3. Resistivity changes in silicon single crystals induced by heat treatment
4. Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500 °C
5. Formation kinetics of oxygen thermal donors in silicon
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