Study of the Optical Properties of Sn-doped Sb2S3 Thin Films-Reference-Cited by-同舟云学术

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Study of the Optical Properties of Sn-doped Sb2S3 Thin Films

Published:2011 Issue: Volume:10 Page:313-322
ISSN:1876-6102
Container-title:Energy Procedia
language:en
Short-container-title:Energy Procedia

Author:

Aousgi F.,Kanzari M.

Publisher

Elsevier BV

Reference16 articles.

1. Changes in the physicochemical and optical properties of chalcogenide thin films from the system As-S and As-S-Tl;Petkov;J. Mat. Sci.,2004

2. Optical properties and structure of amorphous (As0.33S0.67)100-xTex and GexSb40-xSx0 chalcogenide semiconducting alloy films deposited by vacuum thermal evaporation;Marquez;J Phys. D: Appl. Phys.,2006

3. Design of Sb2S3 nanorod-bundles: imperfect oriented attachment;Lu;Nanotechnology,2006

4. Some physical properties of evaporated thin films of antimony trisulfide;El Mandouh;J Mat.Sci.,1990

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1. (002) oriented ZnO and ZnO:S thin films by direct ultrasonic spray pyrolysis: A comparative analysis of structure, morphology and physical properties;Materials Today Communications;2023-06

2. Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect;Journal of Nanoparticle Research;2023-03

3. Solution-based in situ deposition of Sb₂S₃ from a single source precursor for resistive random-access memory devices;Materials Advances;2023

4. Recent Advances to Enhance Electrical and Photoelectrical Properties of Antimony Selenide Crystals via Tin Doping;Journal of Electronic Materials;2022-11-01

5. Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices;Electrochimica Acta;2022-11

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