Deep level optical spectroscopy of the levels introduced by transition metals in GaAs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. Inst. of Phys. Conf. Ser. n° 59;Schneider,1981
2. Luminescence of deep transition metal centres in solids
3. Trends in the electronic properties of substitutional3dtransition-metal impurities in GaAs
4. Electronic structure of Cu, Ni, Co, and Fe substitutional impurities in gallium arsenide
5. Detailed optical characterization of the deep cr level in gaas
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3. Jahn-Teller effects in the photoluminescence excitation spectrum of vanadium-doped GaAs;Physical Review B;1993-08-15
4. Phonon scattering by 3d impurities in III-V semiconductors: evidence of a low-spin ground state for V2+in GaAs?;Journal of Physics: Condensed Matter;1989-02-20
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