Phonon scattering by 3d impurities in III-V semiconductors: evidence of a low-spin ground state for V2+in GaAs?
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference34 articles.
1. Acoustic attenuation study of vanadium-doped GaAs
2. Identification of a vanadium‐related level in liquid encapsulated Czochralski‐grown GaAs
3. Phonon Scattering by V2+Ions in GaAs–Evidence of a Low-Spin System
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Further studies of a -like centre in GaP;Journal of Physics: Condensed Matter;1998-11-09
2. Acoustic Phonon Spectroscopy with Superconductor Tunnel Junctions of Low-Energy Defect Excitations in Semiconductors;Advances in Solid State Physics / Festkörperprobleme;1998
3. Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide;Materials Science Forum;1997-12
4. Thermally detected EPR at X and Q bands and optical absorption: application to the study of vanadium in GaAs and GaP;Journal of Physics D: Applied Physics;1993-12-14
5. Studies of GaP:V by thermally detected electron paramagnetic resonance and optical absorption: The V2+problem;Journal of Physics: Condensed Matter;1993-10-11
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