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Thermally detected EPR at X and Q bands and optical absorption: application to the study of vanadium in GaAs and GaP

  • Published:1993-12-14 Issue:12 Volume:26 Page:2231-2238
  • ISSN:0022-3727
  • Container-title:Journal of Physics D: Applied Physics
  • language:
  • Short-container-title:J. Phys. D: Appl. Phys.

Author:

Vasson A,Vasson A -M,Tebbal N,Metoui M El,Bates C A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methods and Techniques of Absorption Spectroscopy of Solids;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009

2. Further studies of a -like centre in GaP;Journal of Physics: Condensed Matter;1998-11-09

3. Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties;Materials Science and Engineering: B;1997-02

4. Investigation of an Orthorhombic Cr3+-like Centre in GaP*;Zeitschrift für Physikalische Chemie;1997-01-01

5. Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study;Physical Review B;1996-10-15
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