Identification of a deep electron trap in GaP:N
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference30 articles.
1. Thermally stimulated current measurements and their correlation with efficiency and degradation in GAP LED'S
2. A deep center associated with the presence of nitrogen in GaP
3. A constant-temperature method for evaluating deep-level parameters in Schottky-barrier TSC measurements
4. Observation of athermal defect annealing in GaP
5. Deep‐level changes associated with the degradation of gallium phosphide red‐light‐emitting diodes
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nature of some electron traps in GaP;Semiconductor Science and Technology;1995-05-01
2. Determination of nitrogen in semiconductor materials using the 14N(p, α)11C and 14N(d, n)15O nuclear reactions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-04
3. Deep electronic levels in carbon-implanted silicon;Physica Status Solidi (a);1988-10-16
4. Green and yellow light emitting diodes produced from vapour phase epitaxial GaP:N. II. Defects produced by 1 MeV proton irradiation;physica status solidi (a);1985-04-16
5. Degradation of green light emitting diodes LPE-GaP:N I. electron beam characterization and deep-level spectroscopy;Physica Status Solidi (a);1984-12-16
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