Swirl defects in float-zoned silicon crystals
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference28 articles.
1. Oxidation‐induced stacking faults in silicon. I. Nucleation phenomenon
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3. The Elimination of Stacking Faults by Preoxidation Gettering of Silicon Wafers: III . Defect Etch Pit Correlation with p‐n Junction Leakage
4. The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensation
5. Sources of oxidation‐induced stacking faults in Czochralski silicon wafers
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