Characterization of deep levels in LEC GaAs crystals by the photoluminescence technique-Reference-Cited by-同舟云学术

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Characterization of deep levels in LEC GaAs crystals by the photoluminescence technique

Published:1983-02 Issue:1-3 Volume:116 Page:404-408
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Tajima M.,Okada Y.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Compensation mechanisms in GaAs

2. Proc. 2nd Conf. Semi-Insulating III–V Materials;Schneider,1982

3. A luminescence band associated with the main electron trap in bulk gallium arsenide

4. Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy

5. Etching of Dislocations on the Low‐Index Faces of GaAs

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1. Below‐Bandgap Photoluminescence from GaAs;physica status solidi (b);2019-12-17

2. Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments;AIP Advances;2019-07

3. Influence of Defects and Transition Elements in Substrates Of Semi-Insulating Gaas on Optical Properties of Algaas/Gaas Quantum-Well Structures;Journal of Russian Laser Research;1998-07

4. Growth and properties of semi-insulating VGF-GaAs;Materials Science and Engineering: B;1997-02

5. On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating “Stoichiometric” GaAs Crystals;Crystal Research and Technology;1995

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