On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating “Stoichiometric” GaAs Crystals-Reference-Cited by-同舟云学术

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On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating “Stoichiometric” GaAs Crystals

Published:1995 Issue:4 Volume:30 Page:531-534
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Glinchuk K. D.,Prokhorovich A. V.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference9 articles.

1. Structural aspects of non-stoichiometry and heavy doping of GaAs

2. , : Optoelectronica í Poluprovodnikovaja Technica (Kiev, published by “Naukova Dumka”) 24 (1992) 66

3. Influence of non-stoichiometry on the recombination activity of dislocations in undoped semi-insulating GaAs crystals

4. Correlations of photoluminescence with defect densities in semi-insulating gallium arsenide

5. , : Optoelectronica í Poluprovodnikovaja Technica (Kiev, published by “Naukova Dumka”) 27 (1994) 68

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