A luminescence band associated with the main electron trap in bulk gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92247
Reference9 articles.
1. Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center
2. Observation of a stokes shift of luminescence from the gallium vacancy-donor complex in GaAs
3. Effect of electric field on deep‐level transients in GaAs and GaP
4. Phonon assisted tunnel emission of electrons from deep levels in GaAs
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1. Origin of the broadening of surface optical transitions of As-rich and Ga-rich GaAs(001);Surface Science;2003-04
2. Chapter 2 EL2 Defect in GaAs;Imperfections in III/V Materials;1993
3. Major Implantation‐Induced Defects in Conventional and Rapid Annealed, Silicon Implanted LEC‐Grown GaAs;Journal of The Electrochemical Society;1991-01-01
4. Photoluminescence and photoluminescence excitation of 0.635-eVEL0 emission in oxygen-doped semi-insulating GaAs;Physical Review B;1990-12-15
5. Photoluminescence transitions of the deepEL2 defect in gallium arsenide;Physical Review Letters;1990-10-29
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