Manifestations of deep levels point defects in GaAs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference86 articles.
1. Recombination‐enhanced annealing of theE1 andE2 defect levels in 1‐MeV‐electron–irradiatedn‐GaAs
2. Energy dependence of deep level introduction in electron irradiated GaAs
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4. An annealing study of electron irradiation‐induced defects in GaAs
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