Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime-Reference-Cited by-同舟云学术

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Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

Published:2016-04 Issue:4 Volume:50 Page:466-477
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bagraev N. T.,Chaikina E. I.,Danilovskii E. Yu.,Gets D. S.,Klyachkin L. E.,L’vova T. V.,Malyarenko A. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616040060.pdf

Reference45 articles.

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3. S. Nagaraja, P. Matagne, V. Y. Thean, J. P. Leburton, Y. H. Kim, and R. M. Martin, Phys. Rev. B: Condens. Matter 56, 15752 (1997).

4. S. Tarucha, D. G. Austing, and T. Honda, Phys. Rev. Lett. 77, 3613 (1996).

5. C. W. J. Beenakker, Phys. Rev. B 44, 1646 (1991).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials;Chinese Journal of Lasers;2018

2. Single electron transistor: Energy-level broadening effect and thermionic contribution;Semiconductors;2017-12

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