Optical measurement of gain coefficients in Ga0.47In0.53As
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference19 articles.
1. Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH Lasers
2. MBE-grown InGaAs/InP BH lasers with LPE burying layers
3. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
4. Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor
5. Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen ion-beam induced changes in the photoluminescence of GaSb/AlSb MQW structures;Superlattices and Microstructures;1989-01
2. Optical spectroscopy on Eo+Δo transitions in quantum wells;Superlattices and Microstructures;1987-01
3. Temperature dependence of threshold current of In1-x GaxAsyP1-y lasers with different compositions;IEE Proceedings J Optoelectronics;1987
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